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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *High Switching Speed *High Voltage APPLICATIONS *Off-line power supplies *High voltage inverters *Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2N6933 VCEV Collector-Emitter Voltage (VBE= -1.5V) 2N6934 2N6935 2N6933 VCEX Collector-Emitter Voltage 2N6934 2N6935 2N6933 VCEO Collector-Emitter Voltage 2N6934 2N6935 VEBO IC ICM IB B 2N6933/34/35 VALUE 450 550 650 350 400 450 300 350 400 8 15 23 5 7 20 30 175 150 -65~150 UNIT V V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Emitter Current-Continuous Emitter Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range V A A A A A A W IBM IE IEM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.71 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER 2N6933 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N6934 2N6935 V(BR)EBO VCE(sat) VBE(sat) ICEV IEBO hFE COB Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance IE= 50mA; IC= 0 IC= 15A; IB= 3A IC= 15A; IB= 3A; TC= 100 IC= 15A; IB= 3A IC= 15A; IB= 3A; TC= 100 VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V; TC= 100 VEB= 8V; IC=0 IC= 15A ; VCE= 3V IE= 0;VCB= 10V,ftest= 1.0MHz IC= 0.2A ;L= 25mH CONDITIONS 2N6933/34/35 MIN 300 350 400 8 MAX UNIT V V 1.0 2.0 1.5 1.5 0.1 1.0 2.0 V V mA mA 8 150 35 pF Switching Times; Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time IC= 15A; IB1= -IB2= 3A; RL= 20; VBB= -5V; VCC= 300V; tp= 30s 0.1 0.7 2.5 0.5 s s s s isc Websitewww.iscsemi.cn 2 |
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